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2SK2077 Specs and Replacement

Type Designator: 2SK2077

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm

Package: SC65

2SK2077 substitution

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2SK2077 datasheet

 ..1. Size:63K  no
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2SK2077

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 ..2. Size:219K  inchange semiconductor
2sk2077.pdf pdf_icon

2SK2077

isc N-Channel MOSFET Transistor 2SK2077 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai... See More ⇒

 8.1. Size:59K  1
2sk2070.pdf pdf_icon

2SK2077

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2070 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2070 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) 7.0 MAX. 1.2 is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the ac... See More ⇒

 8.2. Size:132K  st
2sk2078 stw9na80.pdf pdf_icon

2SK2077

STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA80 800 V ... See More ⇒

Detailed specifications: SD211DE, SD213DE, SD215DE, SST211, SST213, SST215, 2SK3645-01MR, 2SK2663, IRF3710, 2SK1488, 2SK606, 2SJ646, 2SJ169, 2SJ170, FSA07N60A, FSN01N60A, FSW25N50A

Keywords - 2SK2077 MOSFET specs

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