2SK2077 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2077
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 160 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.7 Ohm
Тип корпуса: SC65
2SK2077 Datasheet (PDF)
2sk2077.pdf
isc N-Channel MOSFET Transistor 2SK2077DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai
2sk2070.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2070N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2070 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)7.0 MAX.1.2is a switching element that can be directly driven by the output ofan IC operating at 5 V.This product has a low ON resistance and superb switchingcharacteristics and is ideal for driving the ac
2sk2078 stw9na80.pdf
STW9NA80STH9NA80FI N - CHANNEL 800V - 0.85 - 9.1A - TO-247/ISOWATT218FAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTW9NA80 800 V
2sk2078.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sk2074.pdf
Ordering number:ENN4499N-Channel Junction Silicon FET2SK2074High-Frequency Low-NoiseAmplifier ApplicationsApplications Package Dimensions AM tuner RF amplifier applications.unit:mm Low-noise amplifier.2034A[2SK2074]2.24.0Features Large | yfs |. Small Ciss.0.40.5 Ultralow noise figure.0.40.41 2 31 : Source1.3 1.32 : Gate3 : Drain
2sk2071-01l-s.pdf
N-channel MOS-FET2SK2071-01L,SFAP-IIA Series 600V 6,5 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2078.pdf
isc N-Channel MOSFET Transistor 2SK2078DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai
2sk2071-01l.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2071-01LFEATURESHigh speed switchingLow On-ResistanceLow driving powerHigh voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operationDESCRIPTIONSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918