P7006BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P7006BL Datasheet (PDF)

..1. Size:419K unikc
p7006bl.pdf pdf_icon

P7006BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID70m @VGS = 10V60V 3.8ASOT-223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3.8IDContinuous Drain CurrentTA = 70 C3AIDM25Pulsed Drain Current12IASAvalanche Current 16

9.1. Size:155K vishay
sup70060e.pdf pdf_icon

SUP70060Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0058 at VGS = 10 V 131100 53.5 nC 100 % Rg and UIS tested0.0064 at VGS = 7.5 V 129 Material categorization:for definitions of compliance please see TO-220A

9.2. Size:262K inchange semiconductor
sup70060e.pdf pdf_icon

Isc N-Channel MOSFET Transistor SUP70060EFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .