P7006BL
MOSFET. Datasheet pdf. Equivalent
Type Designator: P7006BL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13.2
nC
trⓘ - Rise Time: 17.4
nS
Cossⓘ -
Output Capacitance: 62
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
SOT223
P7006BL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P7006BL
Datasheet (PDF)
..1. Size:419K unikc
p7006bl.pdf
P7006BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID70m @VGS = 10V60V 3.8ASOT-223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3.8IDContinuous Drain CurrentTA = 70 C3AIDM25Pulsed Drain Current12IASAvalanche Current 16
9.1. Size:155K vishay
sup70060e.pdf
SUP70060Ewww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature0.0058 at VGS = 10 V 131100 53.5 nC 100 % Rg and UIS tested0.0064 at VGS = 7.5 V 129 Material categorization:for definitions of compliance please see TO-220A
9.2. Size:262K inchange semiconductor
sup70060e.pdf
Isc N-Channel MOSFET Transistor SUP70060EFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
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