P7006BL - аналоги, параметры транзистора - Справочник транзисторов

P7006BL даташит

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P7006BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 70m @VGS = 10V 60V 3.8A SOT-223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 3.8 ID Continuous Drain Current TA = 70 C 3 A IDM 25 Pulsed Drain Current1 2 IAS Avalanche Current 16

9.1. Size:155K vishay
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SUP70060E www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Maximum 175 C junction temperature 0.0058 at VGS = 10 V 131 100 53.5 nC 100 % Rg and UIS tested 0.0064 at VGS = 7.5 V 129 Material categorization for definitions of compliance please see TO-220A

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Isc N-Channel MOSFET Transistor SUP70060E FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

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