P4506BV
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P4506BV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 5.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3
V
Qgⓘ - Carga de la puerta: 21
nC
trⓘ - Tiempo de subida: 188
nS
Cossⓘ - Capacitancia
de salida: 103
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045
Ohm
Paquete / Cubierta:
SOP8
Búsqueda de reemplazo de MOSFET P4506BV
P4506BV
Datasheet (PDF)
..1. Size:501K unikc
p4506bv.pdf 
P4506BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = 10V60V 5.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C5.5IDContinuous Drain CurrentTA = 70 C4.5AIDM30Pulsed Drain Current1IASAvalanche Cu
8.1. Size:482K unikc
p4506bd.pdf
P4506BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = 10V60V 22ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C22IDContinuous Drain CurrentTC = 100 AC18IDM80Pulsed Drain Current1
9.1. Size:130K toshiba
mp4506.pdf
MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4506 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta =
9.2. Size:116K ape
ap4506geh-hf.pdf
AP4506GEH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2 RoHS Compliant P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thede
9.3. Size:197K ape
ap4506gem.pdf
AP4506GEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 N-CH BVDSS 30V Simple Drive Requirement D2D1 RDS(ON) 30m Low On-resistance D1 ID 6.4A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON
9.4. Size:117K ape
ap4506gem-hf.pdf
AP4506GEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2D1 Low On-resistance RDS(ON) 30mD1 Fast Switching Performance ID 6.4AG2S2 RoHS Compliant P-CH BVDSS -30VG1SO-8 S1RDS(ON) 40mDescription ID -6AAdvanced Power MOSFETs from APEC provide thedesi
9.5. Size:119K ape
ap4506geh.pdf
AP4506GEHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best
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