P4506BV MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: P4506BV
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 5.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 21 nC
Время нарастания (tr): 188 ns
Выходная емкость (Cd): 103 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.045 Ohm
Тип корпуса: SOP8
P4506BV Datasheet (PDF)
p4506bv.pdf
P4506BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = 10V60V 5.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C5.5IDContinuous Drain CurrentTA = 70 C4.5AIDM30Pulsed Drain Current1IASAvalanche Cu
p4506bd.pdf
P4506BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = 10V60V 22ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C22IDContinuous Drain CurrentTC = 100 AC18IDM80Pulsed Drain Current1
mp4506.pdf
MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4506 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta =
ap4506geh-hf.pdf
AP4506GEH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2 RoHS Compliant P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thede
ap4506gem.pdf
AP4506GEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 N-CH BVDSS 30V Simple Drive Requirement D2D1 RDS(ON) 30m Low On-resistance D1 ID 6.4A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON
ap4506gem-hf.pdf
AP4506GEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2D1 Low On-resistance RDS(ON) 30mD1 Fast Switching Performance ID 6.4AG2S2 RoHS Compliant P-CH BVDSS -30VG1SO-8 S1RDS(ON) 40mDescription ID -6AAdvanced Power MOSFETs from APEC provide thedesi
ap4506geh.pdf
AP4506GEHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best
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