P4506BV MOSFET Datasheet: N-Ch, 60V, 5.5A. Full specification with pinout and replacement list

P4506BV Specs and Replacement

Type Designator: P4506BV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 188 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOP8

P4506BV substitution

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P4506BV datasheet

..1. Size:501K unikc
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P4506BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = 10V 60V 5.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 5.5 ID Continuous Drain Current TA = 70 C 4.5 A IDM 30 Pulsed Drain Current1 IAS Avalanche Cu... See More ⇒

8.1. Size:482K unikc
p4506bd.pdf pdf_icon

P4506BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = 10V 60V 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 22 ID Continuous Drain Current TC = 100 A C 18 IDM 80 Pulsed Drain Current1 ... See More ⇒

9.1. Size:130K toshiba
mp4506.pdf pdf_icon

MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4506 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) P = 5 W (Ta = ... See More ⇒

9.2. Size:116K ape
ap4506geh-hf.pdf pdf_icon

AP4506GEH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9A S1 G1 S2 RoHS Compliant P-CH BVDSS -30V G2 RDS(ON) 36m TO-252-4L Description ID -8A Advanced Power MOSFETs from APEC provide the de... See More ⇒