P0460EIS Todos los transistores

 

P0460EIS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0460EIS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 46 nS

Cossⓘ - Capacitancia de salida: 62 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm

Encapsulados: TO251IS

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P0460EIS datasheet

 ..1. Size:445K  unikc
 p0460eis.pdf pdf_icon

P0460EIS

P0460EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5

 7.1. Size:794K  unikc
 p0460ei.pdf pdf_icon

P0460EIS

P0460EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current

 8.1. Size:809K  unikc
 p0460ed.pdf pdf_icon

P0460EIS

P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current

 8.2. Size:470K  unikc
 p0460etf.pdf pdf_icon

P0460EIS

P0460ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20

MOSTRAR MÁS

Otros transistores... P0460AS , P0460AT , P0460ATF , P0460BTF , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , AON6414A , P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS .

History: IPB048N15N5LF

 

 

 


History: IPB048N15N5LF

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