P0460EIS MOSFET. Datasheet pdf. Equivalent

P0460EIS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

P0460EIS Datasheet (PDF)

1.1. p0460eis.pdf Size:445K _unikc

P0460EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5

3.1. p0460ei.pdf Size:794K _unikc

P0460EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 20 Pulsed Drain Current

 4.1. p0460ed.pdf Size:809K _unikc

P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 20 Pulsed Drain Current

4.2. p0460etf.pdf Size:470K _unikc

P0460ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 20

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MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |