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P0460EIS Specs and Replacement


   Type Designator: P0460EIS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO251IS
 

 P0460EIS substitution

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P0460EIS Specs

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P0460EIS

P0460EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 ... See More ⇒

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P0460EIS

P0460EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current... See More ⇒

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p0460ed.pdf pdf_icon

P0460EIS

P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 Pulsed Drain Current... See More ⇒

 8.2. Size:470K  unikc
p0460etf.pdf pdf_icon

P0460EIS

P0460ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3 @VGS = 10V 600V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C 2.5 A IDM 20 ... See More ⇒

Detailed specifications: P0460AS , P0460AT , P0460ATF , P0460BTF , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , AON6414A , P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS .

History: FK20SM-6 | H5N2504DS

Keywords - P0460EIS MOSFET specs

 P0460EIS cross reference
 P0460EIS equivalent finder
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 P0460EIS substitution
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History: FK20SM-6 | H5N2504DS

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