P0460EIS MOSFET. Datasheet pdf. Equivalent
Type Designator: P0460EIS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 46 nS
Drain-Source Capacitance (Cd): 62 pF
Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
Package: TO251IS
P0460EIS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0460EIS Datasheet (PDF)
1.1. p0460eis.pdf 
Size:445K _unikc
P0460EIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5
3.1. p0460ei.pdf Size:794K _unikc
P0460EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 20 Pulsed Drain Current
4.1. p0460ed.pdf Size:809K _unikc
P0460ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 20 Pulsed Drain Current
4.2. p0460etf.pdf Size:470K _unikc
P0460ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.3Ω @VGS = 10V 600V 4A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 TC = 25 ° C 4 ID Continuous Drain Current2 TC = 100 ° C 2.5 A IDM 20
Datasheet: P0460AS , P0460AT , P0460ATF , P0460BTF , P0460BTFS , P0460CTF-P , P0460ED , P0460EI , IRF520 , P0460ETF , P0465AD , P0465ATF , P0465ATFS , P0465CD , P0465CI , P0465CIS , P0465CS .
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