P0465ATFS Todos los transistores

 

P0465ATFS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0465ATFS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 69 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220FS
 

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P0465ATFS Datasheet (PDF)

 6.1. Size:515K  unikc
 p0465atf-s.pdf pdf_icon

P0465ATFS

P0465ATF / P0465ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.5 @VGS = 10V650V 4ATO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 AC2.2IDM

 8.1. Size:544K  unikc
 p0465ad.pdf pdf_icon

P0465ATFS

P0465ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.5 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5 AIDM7Pulsed Drain Current1

 9.1. Size:422K  unikc
 p0465cd.pdf pdf_icon

P0465ATFS

P0465CDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1

 9.2. Size:428K  unikc
 p0465cs.pdf pdf_icon

P0465ATFS

P0465CSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P0460BTFS , P0460CTF-P , P0460ED , P0460EI , P0460EIS , P0460ETF , P0465AD , P0465ATF , 2SK3878 , P0465CD , P0465CI , P0465CIS , P0465CS , P0465CT , P0465CTF , P0465CTFS , P0470ATF .

History: RJK0631JPD | SIB404DK | STN4412 | IXTP64N10L2 | VBZE12N03 | PMZB290UNE2 | SFF140J

 

 
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