P0465ATFS
MOSFET. Datasheet pdf. Equivalent
Type Designator: P0465ATFS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 69
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5
Ohm
Package: TO220FS
P0465ATFS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P0465ATFS
Datasheet (PDF)
6.1. Size:515K unikc
p0465atf-s.pdf 
P0465ATF / P0465ATFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.5 @VGS = 10V650V 4ATO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 AC2.2IDM
8.1. Size:544K unikc
p0465ad.pdf
P0465ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.5 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C2.5 AIDM7Pulsed Drain Current1
9.1. Size:422K unikc
p0465cd.pdf
P0465CDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1
9.2. Size:428K unikc
p0465cs.pdf
P0465CSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1
9.3. Size:434K unikc
p0465ct.pdf
P0465CTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6m @VGS = 10V650V 4ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain CurrentTC= 100 C2.5AIDM15Pulsed Drain Current1
9.4. Size:789K unikc
p0465ctf-s.pdf
P0465CTF/P0465CTFSN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.7 @VGS = 10V650V 4A100% UIS testedTO-220FTO-220FSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650VVGSGate-Source Voltage 30TC = 25 C4IDContinuous Drain Current2TC = 100 C
9.5. Size:731K unikc
p0465cis.pdf
P0465CISN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-251(IS)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Cur
9.6. Size:474K unikc
p0465ci.pdf
P0465CIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID2.6 @VGS = 10V650V 4ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 650 VVGSGate-Source Voltage 30 VTC= 25 C4IDContinuous Drain Current2TC= 100 C2.5AIDM15Pulsed Drain Current1
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