P0660AT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P0660AT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 113 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 28.9 nC
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 126 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de P0660AT MOSFET
P0660AT PDF Specs
p0660at.pdf
P0660AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.25 @VGS = 10V 600V 6A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4.3 A IDM 20 Pul... See More ⇒
p0660atf.pdf
P0660ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.25 @VGS = 10V 6A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4.3 A IDM 20 Pulsed Drain Curre... See More ⇒
p0660as.pdf
P0660AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1.25 @VGS = 10V 600V 6A TO-263 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 6 ID Continuous Drain Current2 TC = 100 C 4.3 A IDM 20 Pu... See More ⇒
p0660ed.pdf
N-Channel Enhancement Mode P0660ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G 600V 1.35 6A 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 2... See More ⇒
Otros transistores... P0603BT , P0603BV , P0604BD , P0610BTF , P062ABD8 , P062ABDD , P062ABDF , P0660AS , IRFP064N , P0660ATF , P0690ATF , P0690ATFS , P06B03LVG , P06P03LCG , P06P03LCGA , P06P03LDG , P06P03LVG .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847
Popular searches
mn2488 | irfb438 | mj21193g | irf3710 pinout | irf9530 datasheet | mj21194 | oc71 transistor | 2n3440