P0660AT - параметры транзистора MOSFET, его аналоги, datasheet

P0660AT Datasheet (PDF)

..1. Size:626K unikc
p0660at.pdf pdf_icon

P0660ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.25 @VGS = 10V600V 6ATO-220100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3 AIDM20Pul

0.1. Size:459K unikc
p0660atf.pdf pdf_icon

P0660ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 1.25 @VGS = 10V 6ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3AIDM20Pulsed Drain Curre

8.1. Size:630K unikc
p0660as.pdf pdf_icon

P0660ASN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.25 @VGS = 10V600V 6ATO-263100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3AIDM20Pu

9.1. Size:744K niko-sem
p0660ed.pdf pdf_icon

N-Channel Enhancement Mode P0660ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 1.35 6A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 2