All MOSFET. P0660AT Datasheet

 

P0660AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: P0660AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.9 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO220

 P0660AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P0660AT Datasheet (PDF)

 ..1. Size:626K  unikc
 p0660at.pdf

P0660AT P0660AT

P0660ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.25 @VGS = 10V600V 6ATO-220100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3 AIDM20Pul

 0.1. Size:459K  unikc
 p0660atf.pdf

P0660AT P0660AT

P0660ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID600V 1.25 @VGS = 10V 6ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3AIDM20Pulsed Drain Curre

 8.1. Size:630K  unikc
 p0660as.pdf

P0660AT P0660AT

P0660ASN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID1.25 @VGS = 10V600V 6ATO-263100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 600VVGSGate-Source Voltage 30TC = 25 C6IDContinuous Drain Current2TC = 100 C4.3AIDM20Pu

 9.1. Size:744K  niko-sem
 p0660ed.pdf

P0660AT P0660AT

N-Channel Enhancement Mode P0660ED NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 1.35 6A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 V TC = 2

 9.2. Size:190K  niko-sem
 p0660ei.pdf

P0660AT P0660AT

N-Channel Enhancement Mode P0660EINIKO-SEM TO-251 Field Effect Transistor Halogen-Free & Lead-FreeDPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE 2. DRAIN G600V 1.35 6A 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 600 VGate-Source Voltage VGS 30 VTC = 25 C

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STN3N45K3 | MTB40P06V8

 

 
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