P06P03LCG Datasheet. Equivalente

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 p06p03lcg.pdf

P-Channel Logic Level Enhancement P06P03LCG NIKO-SEM Mode Field Effect Transistor SOT-89 Lead-Free D PRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G 3. SOURCE -30 45m -4A S ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 20 V TC = 25 C -4

 ..2. Size:342K  unikc
 p06p03lcg.pdf

P06P03LCG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 45m @VGS = -10V -3.5A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 C -2.8 A IDM -20 Pulsed Drain

 ..3. Size:342K  niko-sem
 p06p03lcg.pdf

P06P03LCG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 45m @VGS = -10V -3.5A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 C -2.8 A IDM -20 Pulsed Drain

 0.1. Size:480K  unikc
 p06p03lcga.pdf

P06P03LCGA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -10V -30V -4A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -4 ID Continuous Drain Current TA = 70 C -3 A IDM -20 Pulsed Drain Cur

 7.1. Size:492K  unikc
 p06p03ldg.pdf

P06P03LDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 45m @VGS = -10V -12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -12 ID Continuous Drain Current TC = 100 C -10 A IDM -30 Pulsed Drain C

 7.2. Size:816K  unikc
 p06p03lvg.pdf

P06P03LVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -10V -30V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -5 IDM -30 Pulse

 7.3. Size:492K  niko-sem
 p06p03ldg.pdf

P06P03LDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 45m @VGS = -10V -12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -12 ID Continuous Drain Current TC = 100 C -10 A IDM -30 Pulsed Drain C

 7.4. Size:370K  niko-sem
 p06p03lvg.pdf

P06P03LVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 45m @VGS = -10V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -5 IDM -30 Pulsed Drain Curre