P06P03LCG
MOSFET. Datasheet pdf. Equivalent
Type Designator: P06P03LCG
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.78
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 163
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
SOT89
P06P03LCG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P06P03LCG
Datasheet (PDF)
..1. Size:342K unikc
p06p03lcg.pdf 
P06P03LCGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -3.5ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-3.5IDContinuous Drain CurrentTA = 70 C-2.8AIDM-20Pulsed Drain
..2. Size:342K niko-sem
p06p03lcg.pdf
P06P03LCGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -3.5ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-3.5IDContinuous Drain CurrentTA = 70 C-2.8AIDM-20Pulsed Drain
0.1. Size:480K unikc
p06p03lcga.pdf
P06P03LCGAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = -10V-30V -4ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-4IDContinuous Drain CurrentTA = 70 C-3AIDM-20Pulsed Drain Cur
7.1. Size:492K unikc
p06p03ldg.pdf
P06P03LDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TC = 25 C-12IDContinuous Drain CurrentTC = 100 C-10AIDM-30Pulsed Drain C
7.2. Size:816K unikc
p06p03lvg.pdf
P06P03LVGP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = -10V-30V -6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-6IDContinuous Drain CurrentTA = 70 AC-5IDM-30Pulse
7.3. Size:492K niko-sem
p06p03ldg.pdf
P06P03LDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TC = 25 C-12IDContinuous Drain CurrentTC = 100 C-10AIDM-30Pulsed Drain C
7.4. Size:370K niko-sem
p06p03lvg.pdf
P06P03LVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-6IDContinuous Drain CurrentTA = 70 AC-5IDM-30Pulsed Drain Curre
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