P06P03LDG Todos los transistores

 

P06P03LDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P06P03LDG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO252
 

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P06P03LDG Datasheet (PDF)

 ..1. Size:492K  unikc
 p06p03ldg.pdf pdf_icon

P06P03LDG

P06P03LDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TC = 25 C-12IDContinuous Drain CurrentTC = 100 C-10AIDM-30Pulsed Drain C

 ..2. Size:492K  niko-sem
 p06p03ldg.pdf pdf_icon

P06P03LDG

P06P03LDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID-30V 45m @VGS = -10V -12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TC = 25 C-12IDContinuous Drain CurrentTC = 100 C-10AIDM-30Pulsed Drain C

 7.1. Size:315K  1
 p06p03lcg.pdf pdf_icon

P06P03LDG

P-Channel Logic Level Enhancement P06P03LCGNIKO-SEM Mode Field Effect Transistor SOT-89Lead-FreeDPRODUCT SUMMARY 1. GATE V(BR)DSS RDS(ON) ID 2. DRAIN G3. SOURCE-30 45m -4A SABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VTC = 25 C -4

 7.2. Size:480K  unikc
 p06p03lcga.pdf pdf_icon

P06P03LDG

P06P03LCGAP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = -10V-30V -4ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -30VVGSGate-Source Voltage 20TA = 25 C-4IDContinuous Drain CurrentTA = 70 C-3AIDM-20Pulsed Drain Cur

MOSTRAR MÁS

Otros transistores... P0660AS , P0660AT , P0660ATF , P0690ATF , P0690ATFS , P06B03LVG , P06P03LCG , P06P03LCGA , IRF840 , P06P03LVG , P9006EDG , P9006EI , P9006EL , P9006ESG , P9006ETF , P9006EVG , P0703BD .

History: IPD50R280CE | HFS3N80 | QM04N65F | QM12N65F | STB21NM50N | HRLF33N03K | QM04N60F

 

 
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