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P1520ED MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P1520ED
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 83 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 15 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 30.7 nC
   Tiempo de subida (tr): 133 nS
   Conductancia de drenaje-sustrato (Cd): 149 pF
   Resistencia entre drenaje y fuente RDS(on): 0.198 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET P1520ED

 

P1520ED Datasheet (PDF)

 ..1. Size:799K  unikc
p1520ed.pdf

P1520ED P1520ED

P1520EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID198m @VGS = 10V200V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 20 VTC= 25 C15IDContinuous Drain CurrentTC= 100 C9.3AIDM45Pulsed Drain Curren

 9.1. Size:387K  1
ncep1520k.pdf

P1520ED P1520ED

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.2. Size:349K  ncepower
ncep1520g.pdf

P1520ED P1520ED

http://www.ncepower.com NCEP1520GNCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 9.3. Size:379K  ncepower
ncep1520bk.pdf

P1520ED P1520ED

http://www.ncepower.com NCEP1520BKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.4. Size:349K  ncepower
ncep1520.pdf

P1520ED P1520ED

http://www.ncepower.com NCEP1520NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin

 9.5. Size:419K  ncepower
ncep1520ak.pdf

P1520ED P1520ED

http://www.ncepower.com NCEP1520AKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.6. Size:391K  ncepower
ncep1520k.pdf

P1520ED P1520ED

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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