P1520ED MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P1520ED
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 83 W
Tensión drenaje-fuente |Vds|: 200 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 3 V
Carga de compuerta (Qg): 30.7 nC
Tiempo de elevación (tr): 133 nS
Conductancia de drenaje-sustrato (Cd): 149 pF
Resistencia drenaje-fuente RDS(on): 0.198 Ohm
Empaquetado / Estuche: TO252
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P1520ED Datasheet (PDF)
..1. p1520ed.pdf 
Size:799K _unikc
P1520EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID198m @VGS = 10V200V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 20 VTC= 25 C15IDContinuous Drain CurrentTC= 100 C9.3AIDM45Pulsed Drain Curren
9.1. ncep1520k.pdf Size:387K _1
Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
9.2. ncep1520k.pdf Size:391K _ncepower
Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
9.3. ncep1520.pdf Size:349K _ncepower
http://www.ncepower.com NCEP1520NCE N-Channel Super Trench Power MOSFET Description The NCEP1520 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin
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