P1520ED datasheet, аналоги, основные параметры
Наименование производителя: P1520ED 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 133 ns
Cossⓘ - Выходная емкость: 149 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.198 Ohm
Тип корпуса: TO252
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Аналог (замена) для P1520ED
- подборⓘ MOSFET транзистора по параметрам
P1520ED даташит
p1520ed.pdf
P1520ED N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 198m @VGS = 10V 200V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage 20 V TC= 25 C 15 ID Continuous Drain Current TC= 100 C 9.3 A IDM 45 Pulsed Drain Curren
ncep1520k.pdf
Pb Free Product http //www.ncepower.com NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1520g.pdf
http //www.ncepower.com NCEP1520G NCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep1520bk.pdf
http //www.ncepower.com NCEP1520BK NCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Другие IGBT... P1503HK, P1503HV, P1504BDG, P1504BVG, P1504EDG, P1504EIS, P1504HV, P1510ATG, 2N7002, P1603BD, P1603BEB, P1603BEBA, P1603BEBB, P1603BV, P1603BVA, P1604ED, P1604ET
Параметры MOSFET. Взаимосвязь и компромиссы
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