P1520ED Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: P1520ED
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 133 ns
Cossⓘ - Выходная емкость: 149 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.198 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
P1520ED Datasheet (PDF)
p1520ed.pdf

P1520EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID198m @VGS = 10V200V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 20 VTC= 25 C15IDContinuous Drain CurrentTC= 100 C9.3AIDM45Pulsed Drain Curren
ncep1520k.pdf

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1520g.pdf

http://www.ncepower.com NCEP1520GNCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep1520bk.pdf

http://www.ncepower.com NCEP1520BKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2N6756JTXV | 2N6760JANTXV | RU7550S | STP20NM60FP | IXTL2X200N085T | AUIRFZ34N | IRLML9301TRPBF
History: 2N6756JTXV | 2N6760JANTXV | RU7550S | STP20NM60FP | IXTL2X200N085T | AUIRFZ34N | IRLML9301TRPBF



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