All MOSFET. P1520ED Datasheet

 

P1520ED Datasheet and Replacement


   Type Designator: P1520ED
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 133 nS
   Cossⓘ - Output Capacitance: 149 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.198 Ohm
   Package: TO252
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P1520ED Datasheet (PDF)

 ..1. Size:799K  unikc
 p1520ed.pdf pdf_icon

P1520ED

P1520EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID198m @VGS = 10V200V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 20 VTC= 25 C15IDContinuous Drain CurrentTC= 100 C9.3AIDM45Pulsed Drain Curren

 9.1. Size:387K  1
 ncep1520k.pdf pdf_icon

P1520ED

Pb Free Producthttp://www.ncepower.com NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.2. Size:349K  ncepower
 ncep1520g.pdf pdf_icon

P1520ED

http://www.ncepower.com NCEP1520GNCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 9.3. Size:379K  ncepower
 ncep1520bk.pdf pdf_icon

P1520ED

http://www.ncepower.com NCEP1520BKNCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

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Keywords - P1520ED MOSFET datasheet

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