All MOSFET. P1520ED Datasheet


P1520ED MOSFET. Datasheet pdf. Equivalent

Type Designator: P1520ED

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30.7 nC

Rise Time (tr): 133 nS

Drain-Source Capacitance (Cd): 149 pF

Maximum Drain-Source On-State Resistance (Rds): 0.198 Ohm

Package: TO252

P1520ED Transistor Equivalent Substitute - MOSFET Cross-Reference Search


P1520ED Datasheet (PDF)

0.1. p1520ed.pdf Size:799K _unikc


P1520EDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID198m @VGS = 10V200V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 200 VVGSGate-Source Voltage 20 VTC= 25 C15IDContinuous Drain CurrentTC= 100 C9.3AIDM45Pulsed Drain Curren

9.1. ncep1520k.pdf Size:387K _1


Pb Free Product NCEP1520KNCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

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