P1603BEBB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P1603BEBB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.8 W
Tensión drenaje-fuente |Vds|: 30 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V
Carga de compuerta (Qg): 13.4 nC
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 86 pF
Resistencia drenaje-fuente RDS(on): 0.016 Ohm
Empaquetado / Estuche: PDFN2X2S
Búsqueda de reemplazo de MOSFET P1603BEBB
P1603BEBB Datasheet (PDF)
..1. p1603bebb.pdf 
Size:681K _unikc
P1603BEBBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.2ATA=
6.1. p1603beba.pdf Size:456K _unikc
P1603BEBAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.8ATA=
6.2. p1603beb.pdf Size:221K _unikc
P1603BEBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 21APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C21TC = 100 C17IDContinuous Drain Current3TA = 25 C8ATA= 70
8.1. p1603bv.pdf Size:336K _unikc
P1603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 16m @VGS = 10V 10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C10IDContinuous Drain CurrentTA = 70 C8AIDM55Pulsed Drain Current1IASAvalanche Current 23EAS
8.2. p1603bd.pdf Size:534K _unikc
P1603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V30V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C40IDContinuous Drain CurrentTC= 100 C32AIDM150Pulsed Drain Current1
8.3. p1603bva.pdf Size:473K _unikc
P1603BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V30V 9.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9.4IDContinuous Drain CurrentTA = 70 C7.5AIDM50Pulsed Drain Current
Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF3710 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
