P1603BEBB PDF and Equivalents Search

 

P1603BEBB Specs and Replacement

Type Designator: P1603BEBB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 86 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PDFN2X2S

P1603BEBB substitution

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P1603BEBB datasheet

 ..1. Size:681K  unikc
 p1603bebb.pdf pdf_icon

P1603BEBB

P1603BEBB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 24 TC = 100 C 15 ID Continuous Drain Current3 TA = 25 C 8.2 A TA=... See More ⇒

 6.1. Size:221K  unikc
 p1603beb.pdf pdf_icon

P1603BEBB

P1603BEB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 21A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 21 TC = 100 C 17 ID Continuous Drain Current3 TA = 25 C 8 A TA= 70... See More ⇒

 6.2. Size:456K  unikc
 p1603beba.pdf pdf_icon

P1603BEBB

P1603BEBA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 16m @VGS = 10V 30V 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 24 TC = 100 C 15 ID Continuous Drain Current3 TA = 25 C 8.8 A TA=... See More ⇒

 8.1. Size:473K  unikc
 p1603bva.pdf pdf_icon

P1603BEBB

P1603BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 16m @VGS = 10V 30V 9.4A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 9.4 ID Continuous Drain Current TA = 70 C 7.5 A IDM 50 Pulsed Drain Current... See More ⇒

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Detailed specifications: P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P1603BD , P1603BEB , P1603BEBA , IRFB4227 , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF , P1606BD , P1610AD , P1610AT .

Keywords - P1603BEBB MOSFET specs

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