P2502IZG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P2502IZGDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22m @VGS = 4.5V20V 6.3ATSSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 20 VVGSGate-Source Voltage 8 VTA= 25 C6.3IDContinuous Drain Current2TA = 70 C5AIDM50Pulsed Drain C

ZXTP25020CFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Description Mechanical Data Advanced process capability and packaging maximize the power Case: SOT23F handling and performance of this small outline transistor. The reverse Case Material: Molded Plastic. Green Molding Compound. blocking capability of the transistor can often result in the elimination UL Flammability

ZXTP25020DZ20V PNP high gain transistor in SOT89SummaryBVCEO > -20VBVECO > -4VIC(cont) = 5A VCE(sat)

ZXTP25020CFH 20V PNP LOW POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -20V Case: SOT23 BVECO > -7V Case Material: Molded Plastic, Green Molding Compound IC = -4A Continuous Collector Current UL Flammability Classification Rating 94V-0 VCE(sat)

ZXTP25020BFH20V, SOT23, PNP medium power transistorSummaryBVCEX > -40VBVCEO > -20VBVECO > -7VIC(cont) = -4ARCE(sat) = 32 m VCE(sat)

ZXTP25020DFH20V, SOT23, PNP medium power transistorSummaryBVCEO > -20VBVECO > -4VIC(cont) = 4AVCE(sat)

ZXTP25020DG20V PNP high gain transistor in SOT223SummaryBVCEO > -20VBVECO > -4V IC(cont) = 6A VCE(sat)

ZXTP25020DFL20V, SOT23, PNP low power transistorSummaryBVCEO > -20VBVECO > -4VIC(cont) = 1.5AVCE(sat)

Supertex inc. TP2502P-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (-2.4V max.) This low threshold enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven silicon-gate manufacturing process. This Low input capacitance (125pF max.)combination produces a device