P2502IZG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P2502IZG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22m @VGS = 4.5V 20V 6.3A TSSOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 V TA= 25 C 6.3 ID Continuous Drain Current2 TA = 70 C 5 A IDM 50 Pulsed Drain C

ZXTP25020CFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Description Mechanical Data Advanced process capability and packaging maximize the power Case SOT23F handling and performance of this small outline transistor. The reverse Case Material Molded Plastic. Green Molding Compound. blocking capability of the transistor can often result in the elimination UL Flammability

ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat)

ZXTP25020BFH 20V, SOT23, PNP medium power transistor Summary BVCEX > -40V BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 32 m VCE(sat)

ZXTP25020DFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 4A VCE(sat)

ZXTP25020DG 20V PNP high gain transistor in SOT223 Summary BVCEO > -20V BVECO > -4V IC(cont) = 6A VCE(sat)

ZXTP25020DFL 20V, SOT23, PNP low power transistor Summary BVCEO > -20V BVECO > -4V IC(cont) = 1.5A VCE(sat)

Supertex inc. TP2502 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold (-2.4V max.) This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s High input impedance well-proven silicon-gate manufacturing process. This Low input capacitance (125pF max.) combination produces a device