P2502IZG Specs and Replacement
Type Designator: P2502IZG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 134 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSSOP8
P2502IZG substitution
- MOSFET ⓘ Cross-Reference Search
P2502IZG datasheet
p2502izg.pdf
P2502IZG Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22m @VGS = 4.5V 20V 6.3A TSSOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 8 V TA= 25 C 6.3 ID Continuous Drain Current2 TA = 70 C 5 A IDM 50 Pulsed Drain C... See More ⇒
zxtp25020cff.pdf
ZXTP25020CFF 20V PNP MEDIUM POWER TRANSISTOR IN SOT23F Description Mechanical Data Advanced process capability and packaging maximize the power Case SOT23F handling and performance of this small outline transistor. The reverse Case Material Molded Plastic. Green Molding Compound. blocking capability of the transistor can often result in the elimination UL Flammability ... See More ⇒
zxtp25020dz.pdf
ZXTP25020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC(cont) = 5A VCE(sat) ... See More ⇒
Detailed specifications: P2103HVG, P2103NVG, P2202CM, P2202CM6, P2202CV, P2204ND5G, P2206BD, P2402OV, EMB04N03H, P8008BD, P8008BDA, P8008BV, P8008BVA, P8008HV, P8008HVA, P8010BD, P8010BIS
Keywords - P2502IZG MOSFET specs
P2502IZG cross reference
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P2502IZG substitution
P2502IZG replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
