P8008BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P8008BD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 39 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 290 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET P8008BD
P8008BD Datasheet (PDF)
p8008bd.pdf
P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = 10V 80V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Current1
p8008bda.pdf
P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 68m @VGS = 10V 80V 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TC = 25 C 16 ID Continuous Drain Current TC = 100 C 10 A IDM 50 Pulsed Drain Current1
p8008bda.pdf
N-Channel Enhancement Mode P8008BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 80V 68m 16A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TC = 2
p8008bva.pdf
P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 68m @VGS = 10V 80V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 14 Pulsed Drain Current
Otros transistores... P2103NVG , P2202CM , P2202CM6 , P2202CV , P2204ND5G , P2206BD , P2402OV , P2502IZG , RU7088R , P8008BDA , P8008BV , P8008BVA , P8008HV , P8008HVA , P8010BD , P8010BIS , P8010BV .
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