P8008BD Specs and Replacement

Type Designator: P8008BD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 290 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

P8008BD substitution

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P8008BD datasheet

 ..1. Size:651K  unikc
p8008bd.pdf pdf_icon

P8008BD

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = 10V 80V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Current1 ... See More ⇒

 0.1. Size:736K  unikc
p8008bda.pdf pdf_icon

P8008BD

P8008BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 68m @VGS = 10V 80V 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TC = 25 C 16 ID Continuous Drain Current TC = 100 C 10 A IDM 50 Pulsed Drain Current1... See More ⇒

 0.2. Size:345K  niko-sem
p8008bda.pdf pdf_icon

P8008BD

N-Channel Enhancement Mode P8008BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G 80V 68m 16A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TC = 2... See More ⇒

 8.1. Size:450K  unikc
p8008bva.pdf pdf_icon

P8008BD

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 68m @VGS = 10V 80V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 14 Pulsed Drain Current... See More ⇒

Detailed specifications: P2103NVG, P2202CM, P2202CM6, P2202CV, P2204ND5G, P2206BD, P2402OV, P2502IZG, RU7088R, P8008BDA, P8008BV, P8008BVA, P8008HV, P8008HVA, P8010BD, P8010BIS, P8010BV

Keywords - P8008BD MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.