IRF1010N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF1010N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 180 W

Tensión drenaje-fuente |Vds|: 55 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 85 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 120(max) nC

Tiempo de elevación (tr): 76 nS

Conductancia de drenaje-sustrato (Cd): 690 pF

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Paquete / Caja (carcasa): TO220AB

Búsqueda de reemplazo de MOSFET IRF1010N

IRF1010N Datasheet (PDF)

..1. irf1010npbf.pdf Size:225K _international_rectifier

PD - 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

..2. irf1010n.pdf Size:211K _international_rectifier

PD - 91278IRF1010NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 11mG Fast Switching Fully Avalanche RatedID = 85A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

..3. irf1010npbf.pdf Size:225K _infineon

..4. irf1010n.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010N IIRF1010NFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

0.1. irf1010ns.pdf Size:146K _international_rectifier

PD - 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

0.2. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

PD - 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

0.3. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

0.4. irf1010ns.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

Otros transistores... IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , SPP20N60C3 , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 .

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