All MOSFET. IRF1010N Datasheet

 

IRF1010N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF1010N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 130 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 72 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 120 nC

Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm

Package: TO220AB

IRF1010N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF1010N Datasheet (PDF)

0.1. irf1010npbf.pdf Size:225K _international_rectifier

IRF1010N
IRF1010N

PD - 94966A IRF1010NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 11mΩ l Fast Switching G l Fully Avalanche Rated ID = 85A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

0.2. irf1010ns.pdf Size:146K _international_rectifier

IRF1010N
IRF1010N

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 11mΩ Fully Avalanche Rated G Description Advanced HEXFET® Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low

 0.3. irf1010n.pdf Size:211K _international_rectifier

IRF1010N
IRF1010N

PD - 91278 IRF1010N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 11mΩ G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistan

0.4. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

IRF1010N
IRF1010N

PD - 95103 IRF1010NSPbF IRF1010NLPbF l Advanced Process Technology l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Fully Avalanche Rated RDS(on) = 11mΩ l Lead-Free G Description ID = 85A‡ Advanced HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques t

 0.5. irf1010ns.pdf Size:252K _inchange_semiconductor

IRF1010N
IRF1010N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010NS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMU

0.6. irf1010n.pdf Size:246K _inchange_semiconductor

IRF1010N
IRF1010N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1010N, IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM

Datasheet: IRCZ245 , IRCZ345 , IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , J111 , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 .

 

 
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