P3055LDG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P3055LDG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO252

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P3055LDG datasheet

 ..1. Size:385K  unikc
 p3055ldg.pdf pdf_icon

P3055LDG

P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V 25V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 12 ID Continuous Drain Current TC= 100 C 8 A IDM 45 Pulsed Drain Current1 EAS Avalanche Energy

 ..2. Size:843K  cn vbsemi
 p3055ldg.pdf pdf_icon

P3055LDG

P3055LDG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL

 8.1. Size:51K  philips
 php3055l 2.pdf pdf_icon

P3055LDG

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch

 8.2. Size:414K  fairchild semi
 rfd3055le rfd3055lesm rfp3055le.pdf pdf_icon

P3055LDG

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs 11A, 60V These N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those of LSI

MOSTRAR MÁS

Otros transistores... P8315ATF, P8315BD, P8503BMA, P8503BMG, P3003EDG, P3004BD, P3004ND5G, P3010BV, IRF640, P3055LLG, P3202CMA, P3202CMG, P3203CMG, P3203EVG, P3204HV, P3304EV, P3304QV