P3055LDG Datasheet. Specs and Replacement

Type Designator: P3055LDG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

  📄📄 Copy 

P3055LDG substitution

- MOSFET ⓘ Cross-Reference Search

 

P3055LDG datasheet

 ..1. Size:385K  unikc
 p3055ldg.pdf pdf_icon

P3055LDG

P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V 25V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 12 ID Continuous Drain Current TC= 100 C 8 A IDM 45 Pulsed Drain Current1 EAS Avalanche Energy... See More ⇒

 ..2. Size:843K  cn vbsemi
 p3055ldg.pdf pdf_icon

P3055LDG

P3055LDG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL... See More ⇒

 8.1. Size:51K  philips
 php3055l 2.pdf pdf_icon

P3055LDG

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch... See More ⇒

 8.2. Size:414K  fairchild semi
 rfd3055le rfd3055lesm rfp3055le.pdf pdf_icon

P3055LDG

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs 11A, 60V These N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those of LSI ... See More ⇒

SHOW MORE

Detailed specifications: P8315ATF, P8315BD, P8503BMA, P8503BMG, P3003EDG, P3004BD, P3004ND5G, P3010BV, IRFP460, P3055LLG, P3202CMA, P3202CMG, P3203CMG, P3203EVG, P3204HV, P3304EV, P3304QV

Keywords - P3055LDG MOSFET specs

 P3055LDG cross reference

 P3055LDG equivalent finder

 P3055LDG pdf lookup

 P3055LDG substitution

 P3055LDG replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility