All MOSFET. P3055LDG Datasheet

 

P3055LDG MOSFET. Datasheet pdf. Equivalent

Type Designator: P3055LDG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: TO252

P3055LDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P3055LDG Datasheet (PDF)

0.1. p3055ldg.pdf Size:385K _unikc

P3055LDG
P3055LDG

P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90mΩ @VGS = 10V 25V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TC= 25 ° C 12 ID Continuous Drain Current TC= 100 ° C 8 A IDM 45 Pulsed Drain Current1 EAS Avalanche Energy

8.1. php3055l 2.pdf Size:51K _philips

P3055LDG
P3055LDG

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch

8.2. rfd3055le rfd3055lesm rfp3055le.pdf Size:414K _fairchild_semi

P3055LDG
P3055LDG

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs • 11A, 60V These N-Channel enhancement-mode power MOSFETs are • rDS(ON) = 0.107Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approaching those of LSI

 8.3. p3055llg.pdf Size:354K _unikc

P3055LDG
P3055LDG

P3055LLG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 72mΩ @VGS = 10V 6A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±20 V TA = 25 ° C 6 ID Continuous Drain Current TA = 70 ° C 3.3 A IDM 21 Pulsed Drain Current2 IAS Avalanche Current 12 Av

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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