P2504EDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P2504EDG
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 29 nC
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0258 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET P2504EDG
P2504EDG Datasheet (PDF)
p2504edg.pdf
P2504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -18ATO-252100% UIS tested100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 A
p2504ei.pdf
P2504EIP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -30A TO-251ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-30IDContinuous Drain CurrentTC = 70 AC-24IDM-65Pu
zxtp25040dfh.pdf
ZXTP25040DFH40V SOT23 PNP medium power transistorSummaryBVCEO > -40VBVECO > -3V ;IC(CONT) = -3ARCE(sat) = 55 m ;VCE(sat)
zxtp25040dfl.pdf
A Product Line ofA Product Line ofDiodes IncorporatedDiodes IncorporatedZXTP25040DFL 40V PNP LOW POWER TRANSISTOR IN SOT23TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 BVECO > --3V Case Material: Molded Plastic, Green Molding Compound Case Material: Molded Plastic, Green Molding Compound IC = -1.5A Continuous Collec
zxtp25040dz.pdf
ZXTP25040DZ 40V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case: SOT89 IC = -3.5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)
p2504bdg.pdf
P2504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = 10V40V 32ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C32IDContinuous Drain CurrentTC = 100 C20
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PMV130ENEA | NTZD5110N
History: PMV130ENEA | NTZD5110N
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918