P2504EDG Todos los transistores

 

P2504EDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P2504EDG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 29 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0258 Ohm
   Paquete / Cubierta: TO252

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P2504EDG Datasheet (PDF)

 ..1. Size:493K  unikc
p2504edg.pdf

P2504EDG
P2504EDG

P2504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -18ATO-252100% UIS tested100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 A

 8.1. Size:499K  unikc
p2504ei.pdf

P2504EDG
P2504EDG

P2504EIP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -30A TO-251ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-30IDContinuous Drain CurrentTC = 70 AC-24IDM-65Pu

 9.1. Size:245K  diodes
zxtp25040dfh.pdf

P2504EDG
P2504EDG

ZXTP25040DFH40V SOT23 PNP medium power transistorSummaryBVCEO > -40VBVECO > -3V ;IC(CONT) = -3ARCE(sat) = 55 m ;VCE(sat)

 9.2. Size:178K  diodes
zxtp25040dfl.pdf

P2504EDG
P2504EDG

A Product Line ofA Product Line ofDiodes IncorporatedDiodes IncorporatedZXTP25040DFL 40V PNP LOW POWER TRANSISTOR IN SOT23TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 BVECO > --3V Case Material: Molded Plastic, Green Molding Compound Case Material: Molded Plastic, Green Molding Compound IC = -1.5A Continuous Collec

 9.3. Size:584K  diodes
zxtp25040dz.pdf

P2504EDG
P2504EDG

ZXTP25040DZ 40V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case: SOT89 IC = -3.5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)

 9.4. Size:487K  unikc
p2504bdg.pdf

P2504EDG
P2504EDG

P2504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = 10V40V 32ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C32IDContinuous Drain CurrentTC = 100 C20

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: PMV130ENEA | NTZD5110N

 

 
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History: PMV130ENEA | NTZD5110N

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