P2504EDG - Даташиты. Аналоги. Основные параметры

P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25.8m @VGS = -10V -40V -18A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -18 ID Continuous Drain Current TC = 100 A

P2504EI P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25.8m @VGS = -10V -40V -30A TO-251 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -30 ID Continuous Drain Current TC = 70 A C -24 IDM -65 Pu

ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m ; VCE(sat)

A Product Line of A Product Line of Diodes Incorporated Diodes Incorporated ZXTP25040DFL 40V PNP LOW POWER TRANSISTOR IN SOT23 TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case SOT23 BVECO > --3V Case Material Molded Plastic, Green Molding Compound Case Material Molded Plastic, Green Molding Compound IC = -1.5A Continuous Collec

ZXTP25040DZ 40V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case SOT89 IC = -3.5A High Continuous Current Case Material Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)

P2504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25m @VGS = 10V 40V 32A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 TC = 25 C 32 ID Continuous Drain Current TC = 100 C 20