P2504EDG Datasheet and Replacement

P2504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -18ATO-252100% UIS tested100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-18IDContinuous Drain CurrentTC = 100 A

P2504EIP-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25.8m @VGS = -10V-40V -30A TO-251ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-30IDContinuous Drain CurrentTC = 70 AC-24IDM-65Pu

ZXTP25040DFH40V SOT23 PNP medium power transistorSummaryBVCEO > -40VBVECO > -3V ;IC(CONT) = -3ARCE(sat) = 55 m ;VCE(sat)

A Product Line ofA Product Line ofDiodes IncorporatedDiodes IncorporatedZXTP25040DFL 40V PNP LOW POWER TRANSISTOR IN SOT23TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case: SOT23 BVECO > --3V Case Material: Molded Plastic, Green Molding Compound Case Material: Molded Plastic, Green Molding Compound IC = -1.5A Continuous Collec

ZXTP25040DZ 40V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > -40V Case: SOT89 IC = -3.5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL Low Saturation Voltage VCE(sat)

P2504BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25m @VGS = 10V40V 32ATO-252100% Rg tested100% UIS testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TC = 25 C32IDContinuous Drain CurrentTC = 100 C20