P5015ATF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P5015ATF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 223 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO220F

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P5015ATF Datasheet (PDF)

..1. Size:346K unikc
p5015atf.pdf

P5015ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 50m @VGS = 10V 22ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C22IDContinuous Drain Current2TC = 100 C14AIDM90Pulsed Drain Current1IASAvalanche Current 26

9.1. Size:50K motorola
tp5015re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5015/DThe RF LineUHF Linear Power TransistorTP5015. . . designed for 24 Volt UHF largesignal common emitter amplifier applica-tions in industrial and commercial FM equipment operating in the 380 to512 MHz frequency range, i.e., cellular radio base stations. 380512 MHz 15 W Pout 24 V VCC 15

9.2. Size:466K unikc
p5015btf.pdf

P5015BTFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 18ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20Tc = 25 C18IDContinuous Drain CurrentTc = 100 C11AIDM80Pulsed Drain Curre

9.3. Size:473K unikc
p5015bd.pdf

P5015BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 24ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TC = 25 C24IDContinuous Drain Current1TC = 100 C15AIDM90Pulsed Drain Curren

9.4. Size:208K niko-sem
p5015cd.pdf

N-Channel Enhancement Mode P5015CD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G150V 50m 23A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 12 V TC =

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CTD02N004 | CTP10N066

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