Справочник MOSFET. P5015ATF

 

P5015ATF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: P5015ATF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 223 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для P5015ATF

 

 

P5015ATF Datasheet (PDF)

 ..1. Size:346K  unikc
 p5015atf.pdf

P5015ATF P5015ATF

P5015ATF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 50m @VGS = 10V 22ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C22IDContinuous Drain Current2TC = 100 C14AIDM90Pulsed Drain Current1IASAvalanche Current 26

 9.1. Size:50K  motorola
 tp5015re.pdf

P5015ATF P5015ATF

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5015/DThe RF LineUHF Linear Power TransistorTP5015. . . designed for 24 Volt UHF largesignal common emitter amplifier applica-tions in industrial and commercial FM equipment operating in the 380 to512 MHz frequency range, i.e., cellular radio base stations. 380512 MHz 15 W Pout 24 V VCC 15

 9.2. Size:466K  unikc
 p5015btf.pdf

P5015ATF P5015ATF

P5015BTFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 18ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20Tc = 25 C18IDContinuous Drain CurrentTc = 100 C11AIDM80Pulsed Drain Curre

 9.3. Size:473K  unikc
 p5015bd.pdf

P5015ATF P5015ATF

P5015BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID50m @VGS = 10V150V 24ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TC = 25 C24IDContinuous Drain Current1TC = 100 C15AIDM90Pulsed Drain Curren

 9.4. Size:208K  niko-sem
 p5015cd.pdf

P5015ATF P5015ATF

N-Channel Enhancement Mode P5015CD NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G150V 50m 23A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS 12 V TC =

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top