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P5015ATF Spec and Replacement


   Type Designator: P5015ATF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO220F

 P5015ATF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P5015ATF Specs

 ..1. Size:346K  unikc
p5015atf.pdf pdf_icon

P5015ATF

P5015ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 50m @VGS = 10V 22A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 22 ID Continuous Drain Current2 TC = 100 C 14 A IDM 90 Pulsed Drain Current1 IAS Avalanche Current 26... See More ⇒

 9.1. Size:50K  motorola
tp5015re.pdf pdf_icon

P5015ATF

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TP5015/D The RF Line UHF Linear Power Transistor TP5015 . . . designed for 24 Volt UHF large signal common emitter amplifier applica- tions in industrial and commercial FM equipment operating in the 380 to 512 MHz frequency range, i.e., cellular radio base stations. 380 512 MHz 15 W Pout 24 V VCC 15... See More ⇒

 9.2. Size:466K  unikc
p5015btf.pdf pdf_icon

P5015ATF

P5015BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 150V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 Tc = 25 C 18 ID Continuous Drain Current Tc = 100 C 11 A IDM 80 Pulsed Drain Curre... See More ⇒

 9.3. Size:473K  unikc
p5015bd.pdf pdf_icon

P5015ATF

P5015BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 150V 24A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TC = 25 C 24 ID Continuous Drain Current1 TC = 100 C 15 A IDM 90 Pulsed Drain Curren... See More ⇒

Detailed specifications: P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG , P2904BD , P5010AV , AO3400 , P5015BD , P5015BTF , P50N03LTG , P5803NAG , P5806NVG , PB521BX , PV501BA , PV507BA .

Keywords - P5015ATF MOSFET specs

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