PA210BL Todos los transistores

Introduzca al menos 3 números o letras

PA210BL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PA210BL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 116 pF

Resistencia drenaje-fuente RDS(on): 0.12 Ohm

Empaquetado / Estuche: SOT223

Búsqueda de reemplazo de MOSFET PA210BL

PA210BL Datasheet (PDF)

1.1. pa210bl.pdf Size:359K _unikc

PA210BL
PA210BL

PA210BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 120mΩ @VGS = 10V 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C 3 ID Continuous Drain Current TA = 70 ° C 1.9 A IDM 25 Pulsed Drain Current1,2 IAS Avalanche Current 25

4.1. pa210bc.pdf Size:335K _unikc

PA210BL
PA210BL

PA210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 120mΩ @VGS = 10V 3A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TA = 25 ° C 3 ID Continuous Drain Current TA = 70 ° C 1.9 A IDM 26 Pulsed Drain Current1 IAS Avalanche Current 26 EAS

5.1. pa210hva.pdf Size:447K _unikc

PA210BL
PA210BL

PA210HVA Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120mΩ @VGS = 10V 100V 2.3A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 TA = 25 ° C 2.3 ID Continuous Drain Current TA = 70 ° C 1.8 A IDM 20 Pulsed Dra

5.2. pa210hv.pdf Size:434K _unikc

PA210BL
PA210BL

PA210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120mΩ @VGS = 10V 100V 2.8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 TA = 25 ° C 2.8 ID Continuous Drain Current TA = 70 ° C 2.3 A IDM 25 Pulsed Drai

5.3. pa210hk.pdf Size:782K _unikc

PA210BL
PA210BL

PA210HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120mΩ @VGS = 10V 100V 8.7A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 TC = 25 ° C 8.7 ID Continuous Drain Current TC = 100 ° C 5.5 IDM 25 Pulsed Drai

Otros transistores... PA102FMG , PA110BC , PA110BD , PA110BDA , PA110BL , PA110BV , PA203EMG , PA210BC , 2N5485 , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG , PA504EM , PA504EV .

 


PA210BL
  PA210BL
  PA210BL
  PA210BL
 
PA210BL
  PA210BL
  PA210BL
  PA210BL
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 2SJ683 | 2SJ673 | 2SJ661-DL-E | 2SJ661-DL-1E | 2SJ661-1E | 2SJ652-1E | 2SJ651 | 2SJ650 | 2V7002W | 2V7002L | 2V7002K | 2SJ690 | 2SJ687-ZK | 2SJ687 | 2SJ174 |

Introduzca al menos 1 números o letras