PA210BL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PA210BL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 116
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12
Ohm
Package:
SOT223
PA210BL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PA210BL
Datasheet (PDF)
..1. Size:359K unikc
pa210bl.pdf 
PA210BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 120m @VGS = 10V 3A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3IDContinuous Drain CurrentTA = 70 C1.9AIDM25Pulsed Drain Current1,2IASAvalanche Current 25
8.1. Size:335K unikc
pa210bc.pdf
PA210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 120m @VGS = 10V 3ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3IDContinuous Drain CurrentTA = 70 C1.9AIDM26Pulsed Drain Current1IASAvalanche Current 26EAS
9.1. Size:782K unikc
pa210hk.pdf
PA210HKDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 8.7APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C8.7IDContinuous Drain CurrentTC = 100 C5.5IDM25Pulsed Drai
9.2. Size:434K unikc
pa210hv.pdf
PA210HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 2.8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C2.8IDContinuous Drain CurrentTA = 70 C2.3AIDM25Pulsed Drai
9.3. Size:447K unikc
pa210hva.pdf
PA210HVADual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 2.3ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C2.3IDContinuous Drain CurrentTA = 70 C1.8AIDM20Pulsed Dra
9.4. Size:417K niko-sem
pa210hva.pdf
PA210HVA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 110m 2.8A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V
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