PK608DY Todos los transistores

 

PK608DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PK608DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: PDFN5X6P

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PK608DY Datasheet (PDF)

 ..1. Size:819K  unikc
pk608dy.pdf

PK608DY
PK608DY

PK608DYN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel7m @VGS =10V30V 50A Q15.5m @VGS =10V30V 58A Q2 1 : G12,3,4 : D15,6,7 : S2 8 : G29 : S1/D2PDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSQ1 30VDSDrain-Source VoltageQ2 30VQ1 20VGSGate-Sourc

 ..2. Size:310K  niko-sem
pk608dy.pdf

PK608DY
PK608DY

N-Channel Enhancement Mode Field PK608DYNIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 5.5mQ2 30V 58A 2,3,4 : D1 5,6,7 : S2 Q1 30V 7m 50A 8 : G2 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30 VGate-

 9.1. Size:356K  1
pk608ba.pdf

PK608DY
PK608DY

PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volt

 9.2. Size:441K  unikc
pk608ba.pdf

PK608DY
PK608DY

PK608BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.5m @VGS = 10V40V 87APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40 VVGSGate-Source Voltage 20 VTc = 25 C87IDContinuous Drain Current2Tc = 100 C55IDM150Pulsed Drain Curre

 9.3. Size:405K  niko-sem
pk608ba.pdf

PK608DY
PK608DY

PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volta

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SH8M14 | SL9926A | SL3139T

 

 
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History: SH8M14 | SL9926A | SL3139T

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