PK608DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PK608DY N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 7m @VGS =10V 30V 50A Q1 5.5m @VGS =10V 30V 58A Q2 1 G1 2,3,4 D1 5,6,7 S2 8 G2 9 S1/D2 PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS Q1 30 VDS Drain-Source Voltage Q2 30 V Q1 20 VGS Gate-Sourc

N-Channel Enhancement Mode Field PK608DY NIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 G1 5.5m Q2 30V 58A 2,3,4 D1 5,6,7 S2 Q1 30V 7m 50A 8 G2 9 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITS Drain-Source Voltage VDS 30 30 V Gate-

PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G 40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volt

PK608BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 3.5m @VGS = 10V 40V 87A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage 20 V Tc = 25 C 87 ID Continuous Drain Current2 Tc = 100 C 55 IDM 150 Pulsed Drain Curre

PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G 40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volta