PK608DY
MOSFET. Datasheet pdf. Equivalent
Type Designator: PK608DY
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
PDFN5X6P
PK608DY
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PK608DY
Datasheet (PDF)
..1. Size:819K unikc
pk608dy.pdf 
PK608DYN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel7m @VGS =10V30V 50A Q15.5m @VGS =10V30V 58A Q2 1 : G12,3,4 : D15,6,7 : S2 8 : G29 : S1/D2PDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSQ1 30VDSDrain-Source VoltageQ2 30VQ1 20VGSGate-Sourc
..2. Size:310K niko-sem
pk608dy.pdf
N-Channel Enhancement Mode Field PK608DYNIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 5.5mQ2 30V 58A 2,3,4 : D1 5,6,7 : S2 Q1 30V 7m 50A 8 : G2 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30 VGate-
9.1. Size:356K 1
pk608ba.pdf
PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volt
9.2. Size:441K unikc
pk608ba.pdf
PK608BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.5m @VGS = 10V40V 87APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40 VVGSGate-Source Voltage 20 VTc = 25 C87IDContinuous Drain Current2Tc = 100 C55IDM150Pulsed Drain Curre
9.3. Size:405K niko-sem
pk608ba.pdf
PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volta
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