PK608DYN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel7m @VGS =10V30V 50A Q15.5m @VGS =10V30V 58A Q2 1 : G12,3,4 : D15,6,7 : S2 8 : G29 : S1/D2PDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSQ1 30VDSDrain-Source VoltageQ2 30VQ1 20VGSGate-Sourc

N-Channel Enhancement Mode Field PK608DYNIKO-SEM Effect Transistor PDFN 5x6P Halogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1 : G1 5.5mQ2 30V 58A 2,3,4 : D1 5,6,7 : S2 Q1 30V 7m 50A 8 : G2 9 : S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 UNITSDrain-Source Voltage VDS 30 30 VGate-

PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volt

PK608BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.5m @VGS = 10V40V 87APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40 VVGSGate-Source Voltage 20 VTc = 25 C87IDContinuous Drain Current2Tc = 100 C55IDM150Pulsed Drain Curre

PK608BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G. GATE G40V 3.5m 87A D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 40 V Gate-Source Volta