IRF3315 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF3315
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 94 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF3315 MOSFET
IRF3315 Datasheet (PDF)
irf3315pbf.pdf

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic
irf3315.pdf

PD -91623AAPPROVEDIRF3315HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescription ID = 27ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi
irf3315.pdf

isc N-Channel MOSFET Transistor IRF3315IIRF3315FEATURESStatic drain-source on-resistance:RDS(on) 70mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)
irf3315s.pdf

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
Otros transistores... IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , 7N60 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S .



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