IRF3315 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3315  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 94 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO220AB

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IRF3315 datasheet

 ..1. Size:231K  international rectifier
 irf3315pbf.pdf pdf_icon

IRF3315

PD - 94825A IRF3315PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.070 G l Lead-Free Description ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

 ..2. Size:124K  international rectifier
 irf3315.pdf pdf_icon

IRF3315

PD -91623A APPROVED IRF3315 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi

 ..3. Size:245K  inchange semiconductor
 irf3315.pdf pdf_icon

IRF3315

isc N-Channel MOSFET Transistor IRF3315 IIRF3315 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Combine with the fast switching speed and ruggedized device design ABSOLUTE MAXIMUM RATINGS(T =25 )

 0.1. Size:197K  international rectifier
 irf3315s.pdf pdf_icon

IRF3315

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175 C Operating Temperature Fast Switching RDS(on) = 0.082 G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

MOSTRAR MÁS

Otros transistores... IRF250, IRF2807, IRF2807L, IRF2807S, IRF3205, IRF3205L, IRF3205S, IRF330, AO3407, IRF3315L, IRF3315S, IRF340, IRF3415, IRF3415L, IRF3415S, IRF350, IRF3515S