All MOSFET. IRF3315 Datasheet

 

IRF3315 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3315

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 94 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 63.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm

Package: TO220AB

IRF3315 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3315 Datasheet (PDF)

1.1. irf3315pbf.pdf Size:231K _upd

IRF3315
IRF3315

PD - 94825A IRF3315PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 150V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.070Ω G l Lead-Free Description ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

1.2. irf3315lpbf irf3315spbf.pdf Size:385K _upd

IRF3315
IRF3315

PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 5

 1.3. irf3315s.pdf Size:197K _international_rectifier

IRF3315
IRF3315

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

1.4. irf3315.pdf Size:124K _international_rectifier

IRF3315
IRF3315

PD -91623A APPROVED IRF3315 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

 1.5. irf3315l.pdf Size:197K _international_rectifier

IRF3315
IRF3315

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

1.6. irf3315sl.pdf Size:205K _international_rectifier

IRF3315
IRF3315

PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

Datasheet: IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRFP260N , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S .

 
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