All MOSFET. IRF3315 Datasheet

 

IRF3315 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3315

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 94 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 21 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 63.3 nC

Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm

Package: TO220AB

IRF3315 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF3315 Datasheet (PDF)

0.1. auirf3315s.pdf Size:314K _international_rectifier

IRF3315
IRF3315

PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionS

0.2. irf3315l.pdf Size:197K _international_rectifier

IRF3315
IRF3315

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

 0.3. irf3315lpbf irf3315spbf.pdf Size:385K _international_rectifier

IRF3315
IRF3315

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

0.4. irf3315pbf.pdf Size:231K _international_rectifier

IRF3315
IRF3315

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

 0.5. irf3315sl.pdf Size:205K _international_rectifier

IRF3315
IRF3315

PD - 9.1617BIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

0.6. irf3315.pdf Size:124K _international_rectifier

IRF3315
IRF3315

PD -91623AAPPROVEDIRF3315HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescription ID = 27ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi

0.7. irf3315s.pdf Size:197K _international_rectifier

IRF3315
IRF3315

PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev

0.8. irf3315spbf irf3315lpbf.pdf Size:385K _infineon

IRF3315
IRF3315

PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5

0.9. irf3315pbf.pdf Size:231K _infineon

IRF3315
IRF3315

PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic

0.10. irf3315l.pdf Size:256K _inchange_semiconductor

IRF3315
IRF3315

Isc N-Channel MOSFET Transistor IRF3315LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

0.11. irf3315.pdf Size:245K _inchange_semiconductor

IRF3315
IRF3315

isc N-Channel MOSFET Transistor IRF3315IIRF3315FEATURESStatic drain-source on-resistance:RDS(on) 70mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)

0.12. irf3315s.pdf Size:258K _inchange_semiconductor

IRF3315
IRF3315

Isc N-Channel MOSFET Transistor IRF3315SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRFP260N , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S .

 

 
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