IRF3315 Datasheet. Specs and Replacement

Type Designator: IRF3315  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO220AB

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IRF3315 substitution

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IRF3315 datasheet

 ..1. Size:231K  international rectifier
 irf3315pbf.pdf pdf_icon

IRF3315

PD - 94825A IRF3315PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 150V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.070 G l Lead-Free Description ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic... See More ⇒

 ..2. Size:124K  international rectifier
 irf3315.pdf pdf_icon

IRF3315

PD -91623A APPROVED IRF3315 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175 C Operating Temperature Fast Switching RDS(on) = 0.07 Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi... See More ⇒

 ..3. Size:245K  inchange semiconductor
 irf3315.pdf pdf_icon

IRF3315

isc N-Channel MOSFET Transistor IRF3315 IIRF3315 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Combine with the fast switching speed and ruggedized device design ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

 0.1. Size:197K  international rectifier
 irf3315s.pdf pdf_icon

IRF3315

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175 C Operating Temperature Fast Switching RDS(on) = 0.082 G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev... See More ⇒

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Detailed specifications: IRF250, IRF2807, IRF2807L, IRF2807S, IRF3205, IRF3205L, IRF3205S, IRF330, AO3407, IRF3315L, IRF3315S, IRF340, IRF3415, IRF3415L, IRF3415S, IRF350, IRF3515S

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.