IRF3315L Todos los transistores

 

IRF3315L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3315L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 94 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 21 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 95 nC

Resistencia drenaje-fuente RDS(on): 0.082 Ohm

Empaquetado / Estuche: TO262

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IRF3315L Datasheet (PDF)

1.1. irf3315lpbf irf3315spbf.pdf Size:385K _upd

IRF3315L
IRF3315L

PD- 95760 IRF3315SPbF IRF3315LPbF • Lead-Free www.irf.com 1 08/24/04 IRF3315S/LPbF 2 www.irf.com IRF3315S/LPbF www.irf.com 3 IRF3315S/LPbF 4 www.irf.com IRF3315S/LPbF www.irf.com 5 IRF3315S/LPbF 6 www.irf.com IRF3315S/LPbF www.irf.com 7 IRF3315S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 5

1.2. irf3315l.pdf Size:197K _international_rectifier

IRF3315L
IRF3315L

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

 3.1. irf3315pbf.pdf Size:231K _upd

IRF3315L
IRF3315L

PD - 94825A IRF3315PbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 150V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.070Ω G l Lead-Free Description ID = 23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

3.2. irf3315s.pdf Size:197K _international_rectifier

IRF3315L
IRF3315L

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

 3.3. irf3315.pdf Size:124K _international_rectifier

IRF3315L
IRF3315L

PD -91623A APPROVED IRF3315 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

3.4. irf3315sl.pdf Size:205K _international_rectifier

IRF3315L
IRF3315L

PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

Otros transistores... IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , 2SK2545 , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 .

 
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