IRF3315L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF3315L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 94 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 21 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 95(max) nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 300 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.082 Ohm
Тип корпуса: TO262
IRF3315L Datasheet (PDF)
..1. irf3315l.pdf 
Size:197K _international_rectifier
PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
..2. irf3315lpbf irf3315spbf.pdf Size:385K _international_rectifier
PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5
..3. irf3315spbf irf3315lpbf.pdf Size:385K _infineon
PD- 95760IRF3315SPbFIRF3315LPbF Lead-Freewww.irf.com 108/24/04IRF3315S/LPbF2 www.irf.comIRF3315S/LPbFwww.irf.com 3IRF3315S/LPbF4 www.irf.comIRF3315S/LPbFwww.irf.com 5IRF3315S/LPbF6 www.irf.comIRF3315S/LPbFwww.irf.com 7IRF3315S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking InformationT HIS IS AN IRF 5
..4. irf3315l.pdf Size:256K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3315LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150
7.1. auirf3315s.pdf Size:314K _international_rectifier
PD - 97733AUTOMOTIVE GRADEAUIRF3315SFeaturesHEXFET Power MOSFETl Advanced Planar TechnologyDl Low On-ResistanceVDSS 150Vl Dynamic dV/dT Ratingl 175C Operating TemperatureRDS(on) max.82mGl Fast SwitchingID 21Al Fully Avalanche Rated Sl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive Qualified * DDescriptionS
7.2. irf3315pbf.pdf Size:231K _international_rectifier
PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic
7.3. irf3315sl.pdf Size:205K _international_rectifier
PD - 9.1617BIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
7.4. irf3315.pdf Size:124K _international_rectifier
PD -91623AAPPROVEDIRF3315HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.07 Fully Avalanche RatedGDescription ID = 27ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thi
7.5. irf3315s.pdf Size:197K _international_rectifier
PD - 9.1617AIRF3315S/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF3315S)VDSS = 150V Low-profile through-hole (IRF3315L) 175C Operating Temperature Fast SwitchingRDS(on) = 0.082G Fully Avalanche RatedID = 21ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achiev
7.6. irf3315pbf.pdf Size:231K _infineon
PD - 94825AIRF3315PbFHEXFET Power MOSFETl Advanced Process Technologyl Dynamic dv/dt Rating DVDSS = 150Vl 175C Operating Temperaturel Fast Switchingl Fully Avalanche RatedRDS(on) = 0.070Gl Lead-FreeDescription ID = 23ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silic
7.7. irf3315.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF3315IIRF3315FEATURESStatic drain-source on-resistance:RDS(on) 70mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)
7.8. irf3315s.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF3315SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Другие MOSFET... IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , 13N50 , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 .
Список транзисторов
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