IRF3315L MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF3315L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 94 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 21 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.082 Ohm
Package: TO262
IRF3315L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF3315L Datasheet (PDF)
1.1. irf3315l.pdf 
Size:197K _international_rectifier
PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr
3.1. irf3315s.pdf Size:197K _international_rectifier
PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr
3.2. irf3315.pdf Size:124K _international_rectifier
PD -91623A APPROVED IRF3315 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175°C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene
3.3. irf3315sl.pdf Size:205K _international_rectifier
PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr
Datasheet: IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , 2SK2545 , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 .
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