IRF340 Todos los transistores

 

IRF340 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF340

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente |Vds|: 400 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 65 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 0.55 Ohm

Empaquetado / Estuche: TO220SM

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IRF340 Datasheet (PDF)

0.1. irf340.pdf Size:145K _international_rectifier

IRF340
IRF340

PD - 90371REPETITIVE AVALANCHE AND dv/dt RATED IRF340400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF340 400V 0.55 10AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

0.2. irf340 irf341 irf342 irf343.pdf Size:215K _samsung

IRF340
IRF340

 9.1. irf3415spbf irf3415lpbf.pdf Size:1066K _international_rectifier

IRF340
IRF340

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

9.2. irf3415s.pdf Size:156K _international_rectifier

IRF340
IRF340

PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 9.3. irf3415.pdf Size:94K _international_rectifier

IRF340
IRF340

PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

9.4. irf3415pbf.pdf Size:203K _international_rectifier

IRF340
IRF340

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

 9.5. irf3415spbf irf3415lpbf.pdf Size:1066K _infineon

IRF340
IRF340

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

9.6. irf3415pbf.pdf Size:203K _infineon

IRF340
IRF340

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

9.7. irf3415s.pdf Size:257K _inchange_semiconductor

IRF340
IRF340

Isc N-Channel MOSFET Transistor IRF3415SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.8. irf3415l.pdf Size:255K _inchange_semiconductor

IRF340
IRF340

Isc N-Channel MOSFET Transistor IRF3415LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

9.9. irf3415.pdf Size:244K _inchange_semiconductor

IRF340
IRF340

isc N-Channel MOSFET Transistor IRF3415IIRF3415FEATURESStatic drain-source on-resistance:RDS(on) 42mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , BUZ10 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L .

 

 
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