All MOSFET. IRF340 Datasheet

 

IRF340 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF340

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 65(max) nC

Rise Time (tr): 92(max) nS

Drain-Source Capacitance (Cd): 350 pF

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: TO3

IRF340 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF340 Datasheet (PDF)

 ..1. Size:145K  international rectifier
irf340.pdf

IRF340 IRF340

PD - 90371REPETITIVE AVALANCHE AND dv/dt RATED IRF340400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF340 400V 0.55 10AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

 ..2. Size:215K  samsung
irf340 irf341 irf342 irf343.pdf

IRF340 IRF340

 9.1. Size:236K  international rectifier
auirf3415.pdf

IRF340 IRF340

PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptio

 9.2. Size:1066K  international rectifier
irf3415spbf irf3415lpbf.pdf

IRF340 IRF340

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

 9.3. Size:156K  international rectifier
irf3415s.pdf

IRF340 IRF340

PD - 91509CIRF3415S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating TemperatureRDS(on) = 0.042 Fast SwitchingG Fully Avalanche RatedID = 43ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

 9.4. Size:94K  international rectifier
irf3415.pdf

IRF340 IRF340

PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef

 9.5. Size:203K  international rectifier
irf3415pbf.pdf

IRF340 IRF340

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

 9.6. Size:1066K  infineon
irf3415spbf irf3415lpbf.pdf

IRF340 IRF340

PD - 95112IRF3415S/LPbF Lead-Freewww.irf.com 13/16/04IRF3415S/LPbF2 www.irf.comIRF3415S/LPbFwww.irf.com 3IRF3415S/LPbF4 www.irf.comIRF3415S/LPbFwww.irf.com 5IRF3415S/LPbF6 www.irf.comIRF3415S/LPbFwww.irf.com 7IRF3415S/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free) I I I I I I

 9.7. Size:203K  infineon
irf3415pbf.pdf

IRF340 IRF340

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S

 9.8. Size:1631K  cn vbsemi
irf3410.pdf

IRF340 IRF340

IRF3410www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

 9.9. Size:257K  inchange semiconductor
irf3415s.pdf

IRF340 IRF340

Isc N-Channel MOSFET Transistor IRF3415SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

 9.10. Size:255K  inchange semiconductor
irf3415l.pdf

IRF340 IRF340

Isc N-Channel MOSFET Transistor IRF3415LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

 9.11. Size:244K  inchange semiconductor
irf3415.pdf

IRF340 IRF340

isc N-Channel MOSFET Transistor IRF3415IIRF3415FEATURESStatic drain-source on-resistance:RDS(on) 42mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , MMIS60R580P , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L .

 

 
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