IRF340 Datasheet and Replacement
Type Designator: IRF340
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 65(max) nC
tr ⓘ - Rise Time: 92(max) nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO3
IRF340 substitution
IRF340 Datasheet (PDF)
irf340.pdf

PD - 90371REPETITIVE AVALANCHE AND dv/dt RATED IRF340400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF340 400V 0.55 10AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a
irf3415.pdf

PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef
auirf3415.pdf

PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptio
Datasheet: IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , CS150N03A8 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L .
Keywords - IRF340 MOSFET datasheet
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