IRF3415 Todos los transistores

 

IRF3415 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF3415

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 43 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 133.3 nC

Resistencia drenaje-fuente RDS(on): 0.042 Ohm

Empaquetado / Estuche: TO220AB

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IRF3415 Datasheet (PDF)

1.1. irf3415spbf irf3415lpbf.pdf Size:1066K _upd

IRF3415
IRF3415

PD - 95112 IRF3415S/LPbF • Lead-Free www.irf.com 1 3/16/04 IRF3415S/LPbF 2 www.irf.com IRF3415S/LPbF www.irf.com 3 IRF3415S/LPbF 4 www.irf.com IRF3415S/LPbF www.irf.com 5 IRF3415S/LPbF 6 www.irf.com IRF3415S/LPbF www.irf.com 7 IRF3415S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I

1.2. irf3415pbf.pdf Size:203K _upd

IRF3415
IRF3415

 IRF3415PbF l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Ω l Lead-Free G Description S

 1.3. irf3415s.pdf Size:156K _international_rectifier

IRF3415
IRF3415

PD - 91509C IRF3415S/L HEXFET Power MOSFET Advanced Process Technology D VDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175C Operating Temperature RDS(on) = 0.042? Fast Switching G Fully Avalanche Rated ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

1.4. irf3415.pdf Size:94K _international_rectifier

IRF3415
IRF3415

PD - 91477D IRF3415 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175C Operating Temperature Fast Switching RDS(on) = 0.042? Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

 1.5. irf3415s.pdf Size:257K _inchange_semiconductor

IRF3415
IRF3415

Isc N-Channel MOSFET Transistor IRF3415S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

1.6. irf3415.pdf Size:244K _inchange_semiconductor

IRF3415
IRF3415

isc N-Channel MOSFET Transistor IRF3415,IIRF3415 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤42mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Combine with the fast switching speed and ruggedized device design ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

Otros transistores... IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRFBC40 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S .

 

 
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